Pressure-compensated EDC-500P series Mass Flow Controller and Meter
- Full Scale Flow Range: 3sccm-10slpm
- Maximum Pressure Rating: 16Mpa
- Repeatability: ±0.2% F.S
- Control Range: 1%~100% F.S
- Response Time: <0.8s
- Operating Temperature:0~50℃
- Digital Communication:RS-485(Modbus RTU)
- Analog Communication:0~5 V / 4~20mA
Description of EDC-500P Massflow Controller and Metes
The EDC-500P series Mass Flow Controller (MFC) is specifically designed for high-pressure gas measurement and control. Utilizing an advanced capillary-based thermal differential principle and incorporating a built-in pressure compensator alongside a comprehensive gas property database, the series offers high-pressure resistance, corrosion resistance, superior accuracy, and excellent repeatability. It is widely used in applications requiring precise and stable gas flow measurement or control. The electrical interfaces have undergone rigorous Electromagnetic Compatibility (EMC) testing, ensuring robust performance even in complex industrial environments prone to static electricity, surges, and electrical fast transients (EFT). The EDC series is CE and RoHS certified; with customizable flow ranges and operating pressures, it serves as an ideal solution for high-pressure applications.
Deviations resulting from operating or inlet pressure variations are commonly referred to as the “pressure coefficient.” Empirical testing shows that for nitrogen (N2), every 1 MPa difference between the actual inlet pressure and the calibrated pressure can lead to a loss in accuracy of up to approximately 0.6% F.S.; for carbon dioxide (CO2), the same 1 MPa difference can result in an accuracy loss of up to approximately 5% F.S. The EDC-500P series features an innovative combination of a “dynamic pressure compensator” and a “gas property database,” ensuring that control accuracy remains better than 1% F.S. across the entire operating pressure range.
Biosflows EDC-500P Massflow Controller and Metes Technical Parameters
| Performance Specification | |
|---|---|
| Flow Accuracy | ±0.8%F.S |
| Repeatability | ±0.2%F.S |
| Control Range | 1%~100%F.S |
| Response Time | <0.8s |
| Temperature Coefficient | Zero:<0.05%of F.S./℃.Span:<0.1%of S.P./℃ |
| Pressure Coefficient | 0.2%of S.P./Bar |
| Operating Coefficient | 0~50℃ |
| Leakage rate | 1x10-9 atm. cc/sec He |
| Warm-up time | 5min accuracy:±5%F.S(30 min to achieve the best accuracy) |
| Parameters | |
| Power Supply | +15～24 Vdc |
| Max.Power Consumption | 10W(MFC);3W(MFM) |
| Analog Communication | 0～5V/4～20mA |
| Digital Communication | RS-485(Modbus RTU Protocol) |
| Electrical Interface | 9-pin D-connector (male) |
| Description | |
| Valve Type | Normally Closed(MFM is irrelevant) |
| Base Material | 316LStainless Steel |
| Seal Material | FKM,EPDM,NBR |
| Gas Port Connection | American/National Standard Ferrule or VCR Fitting |
EDC-500P Selection Guide
| Model | Max Full-sacle | Min Full-sacle | Withstand Pressure | Max Operating Pressure | Max Operating △P |
|---|---|---|---|---|---|
| EDC-510EP | 10 SCCM | 3 SCCM | 160 Bar | 160 Bar | 160 Bar |
| EDC-510DP | 10 SCCM | 3 SCCM | 100 Bar | 100 Bar | 100 Bar |
| EDC-520EP | 10slpm | 10 SCCM | 160 Bar | 160 Bar | 160 Bar |
| EDC-520DP | 10slpm | 10 SCCM | 100 Bar | 100 Bar | 100 Bar |
EDC-500P Massflow Controller and Metes Size and Weight
| Model | A | B | C | D | H | E | F | G | M | Weight |
|---|---|---|---|---|---|---|---|---|---|---|
| EDC-510EP | 100 | 151 | 13 | 36 | 129 | 64 | 16 | 18 | M4 | 1.6 |
| EDC-510DP | 100 | 151 | 13 | 36 | 129 | 64 | 16 | 18 | M4 | 1.6 |
| EDC-520EP | 100 | 151 | 13 | 36 | 129 | 64 | 16 | 18 | M4 | 1.6 |
| EDC-520DP | 100 | 151 | 13 | 36 | 129 | 64 | 16 | 18 | M4 | 1.6 |
Features of EDC-500P Massflow Controller and Metes
16 MPa dynamic pressure differential
Supports a dynamic pressure differential of up to 16 MPa, ensuring more stable high-pressure control with adaptive response to pressure differential fluctuations. The sensor and valve body are made of 316L stainless steel, making them suitable for use with toxic and corrosive gases.
High Reliability and Performance
High-performance components are tested seven times consecutively in accordance with semiconductor industry standards to ensure their reliability, which is superior to semiconductor industry standard levels in reliability, ensuring reproducible measurement results and highly stable performance over a long period of use.
New Generation Sensor Design
Innovative sensor design, small influence of temperature and pressure changes, accurate temperature and pressure correction, high linearity can provide excellent signal-to-noise ratio performance to improve measurement and control accuracy under low set-point conditions Long-term zero point stability.
Supports both digital and analog signals
Supports both digital and analog signals, allowing customers to switch between them as desired. Digital measurement and control circuit with enhanced anti-interference capability; compatible with 0–5V or 4–20mA analog signals.
Aplication of EDC-500P Massflow Controller and Metes
Epitaxial Process System
The epitaxial process refers to the process of growing a fully aligned single crystal layer on a substrate. In the manufacture of integrated circuits, the commonly used epitaxy method is vapor phase epitaxy. During the epitaxy process, the gas flow into the reaction chamber needs to be precisely controlled. MFC can be equipped on the gas supply line. By adjusting the control parameters of MFC (such as current or pressure), precise control of gas flow can be achieved to ensure stable and accurate gas flow required in the epitaxy process.
Photovoltaic Industry
A certain amount of gas needs to be supplied during the preparation of solar cells, such as precursor gas and protective gas used to prepare thin films. MFC can be used to control the flow of these gases to ensure the stability and repeatability of the solar cell fabrication process. Flow devices are used in the application layer of crystalline silicon wafers for conventional silicon-based solar cells, as well as in the fabrication of thin layers on flexible substrates as second-generation amorphous silicon-based thin-film solar cell components.
Vapor Deposition System
Vapor deposition is a commonly used thin film preparation technology. The gas precursor is sent into the reaction chamber, and the gas precursor is deposited on the surface of the substrate to form a thin film through a chemical reaction or physical process. MFC can accurately control the gas flow during the vapor deposition process according to the preset gas flow to ensure the stability of gas concentration and flow in the reaction chamber. Biosflow is the professional manufacturer of EDC-500 series of Massflow Controller.
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